| PART |
Description |
Maker |
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns
1-Mbit (64Kb x16) UV EPROM, 120ns
1-Mbit (64Kb x16) UV EPROM, 150ns
1-Mbit (64Kb x16) UV EPROM, 200ns
1-Mbit (64Kb x16) UV EPROM, 35ns
1-Mbit (64Kb x16) UV EPROM, 45ns
1-Mbit (64Kb x16) UV EPROM, 55ns
1-Mbit (64Kb x16) UV EPROM, 70ns
1-Mbit (64Kb x16) UV EPROM, 80ns
1-Mbit (64Kb x16) UV EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 120ns
1-Mbit (64Kb x16) OTP EPROM, 70ns
1-Mbit (64Kb x16) OTP EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 55ns
1-Mbit (64Kb x16) OTP EPROM, 45ns
1-Mbit (64Kb x16) OTP EPROM, 35ns
1-Mbit (64Kb x16) OTP EPROM, 150ns
1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
| M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| IS42S16800A1 IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| M58MR064C M58MR064C100ZC6T M58MR064C120ZC6T M58MR0 |
64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| IS42S81600B-7T IS42S81600B-7TI IS42S81600B-7TL IS4 |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42LS32400A IS42LS16800A-10B IS42LS16800A-10TI IS |
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S |
16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
|
| SST39LF160-70-4I-EK SST39VF160-70-4I-EK SST39VF160 |
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
17.5 mm (0.69 inch) General Purpose 8x8 Dot Matrix Alphanumeric Displays 16兆位（x16）的多用途闪
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 3V PROM, 55 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
|
